Multi-thickness semiconductor with fully depleted devices and photonic integration

ABSTRACT

Techniques are disclosed that facilitate fabrication of semiconductors including structures and devices of varying thickness. One embodiment provides a method for semiconductor device fabrication that includes thinning a region of a semiconductor wafer upon which the device is to be formed thereby defining a thin region and a thick region of the wafer. The method continues with forming on the thick region one or more photonic devices and/or partially depleted electronic devices, and forming on the thin region one or more fully depleted electronic devices. Another embodiment provides a semiconductor device that includes a semiconductor wafer defining a thin region and a thick region. The device further includes one or more photonic devices and/or partially depleted electronic devices formed on the thick region, and one or more fully depleted electronic devices formed on the thin region. An isolation area can be formed between the thin region and the thick region.

RELATED APPLICATIONS

This application is related to U.S. application Ser. No. 12/201,807,filed Aug. 29, 2008, and titled “Two-Step Hardmask FabricationMethodology for Silicon Waveguides” which is herein incorporated byreference in its entirety.

FIELD OF THE INVENTION

The invention relates to semiconductors, and more particularly, to amethodology for fabricating semiconductors including structures anddevices of varying thickness.

BACKGROUND OF THE INVENTION

There are number of waveguide structures that can be used to realize anoptical waveguide in silicon, such as ridge and channel waveguides. Insuch structures, light is typically guided in a high refractive indexmaterial (typically referred to as the waveguide core) that issurrounded by a lower index material (typically referred to as thewaveguide cladding).

A channel waveguide is usually formed by depositing a high refractiveindex core material on a low refractive index bottom cladding material.Excess of the high refractive index material to either side of thechannel is removed down to the underlying oxide using standardlithography processing (i.e., mask and etch). Once the channel isformed, a low refractive index upper cladding is deposited around thechannel. The mismatch in refractive index between the core and thecladding effectively operates to contain radiation within the channel ofthe waveguide.

A ridge waveguide is a variation on the channel waveguide, wherein thehigh refractive index core material is only partially etched back to theunderlying oxide, leaving a so-called slab to either side of the ridge.This lowers the in-plane refractive index contrast, which generallydecreases scattering loss. In some applications, both ridge and channeltype waveguide structures are used.

Currently, semiconductors including both CMOS circuitry and siliconwaveguides are fabricated so that the CMOS circuitry and waveguidesessentially have the same silicon thickness. Such conventionaltechniques are associated with a number of disadvantages, including thatthey do not allow for fully depleted SOI devices. Nor do they allow forthe ability to modify waveguide thickness independently of the CMOSdevices.

What is needed, therefore, are techniques that facilitate thefabrication of silicon-based circuitry including CMOS and waveguidestructures. In a more general sense, there is a need for more efficienttechniques for fabricating semiconductors including structures anddevices of varying thickness.

SUMMARY OF THE INVENTION

One embodiment of the present invention provides a semiconductor device.The device includes a semiconductor wafer defining a thin region and athick region. The device further includes one or more photonic devicesand/or partially depleted electronic devices formed on the thick region,and one or more fully depleted electronic devices formed on the thinregion. The device may further include an isolation area formed betweenthe thin region and the thick region. The wafer may be, for example, asilicon-on-insulator (SOI) wafer having epitaxial silicon on a thickburied oxide. The partially depleted electronic devices may be, forexample, partially depleted CMOS devices, and photonic devices may be,for example, waveguides and/or ring modulators. Note, however, that anynumber or combination of thin region devices and thick region devicescan be used.

Another embodiment of the present invention is a method for fabricatinga semiconductor device. The method includes thinning a region of asemiconductor wafer upon which the device is to be formed, therebydefining a thin region and a thick region of the wafer. The methodcontinues with forming on the thick region one or more photonic devicesand/or partially depleted electronic devices, and forming on the thinregion one or more fully depleted electronic devices. The method mayfurther include forming an isolation area between the thin region andthe thick region. The wafer may be, for example, a silicon-on-insulator(SOI) wafer having epitaxial silicon on a thick buried oxide. In somecases, thinning a region of a semiconductor wafer includes the use ofthermal oxidation. The method may include the preliminary steps ofdepositing onto the wafer a two-layer hardmask including a bottom layerof oxide and a top layer of nitride, and then depositing resist over thethick region, thereby leaving the two-layer mask over the thin regionexposed. Here, the method further includes etching the wafer to removethe exposed two-layer hardmask over the thin region. In one suchspecific example case, thinning a region of a semiconductor waferincludes implanting oxygen into an epitaxial silicon layer of the wafer,cleaning the wafer, and then annealing to convert the implanted oxygenregions into oxide. In another such specific example case, thinning aregion of a semiconductor wafer includes partially dry etching anepitaxial silicon layer of the wafer, cleaning the wafer, and thencarrying out a thermal oxidation process to consume damaged epitaxialsilicon resulting from the partial dry etching. In another such specificexample case, thinning a region of a semiconductor wafer includescleaning the wafer, and carrying out a thermal oxidation growth processto consume underlying epitaxial silicon of the wafer. In any such cases,once the epitaxial silicon of the wafer is thinned, the method mayfurther include stripping the two-layer hardmask (including anyremaining resist on that two-layer hardmask). In some cases, forming onthe thick region and forming on the thin region includes depositing ontothe wafer a two-layer hardmask including a bottom layer of oxide and atop layer of nitride, selectively depositing resist on a hardmask areaover the thick region (thereby providing an initial pattern forphotonics and/or any electronics in the thick region), and selectivelydepositing resist on a hardmask area over the thin region (therebyproviding a pattern for fully depleted electronics in the thin region).Here, forming on the thick region and forming on the thin region mayfurther include performing an initial etch to remove unmasked portionsof the hardmask nitride and epitaxial silicon of the wafer, andstripping the selectively deposited resist. In such cases, the initialetch associated with the thick region is partial in that a portion ofunmasked epitaxial silicon remains after the initial etch, and theinitial etch associated with the thin region is a full etch in that allunmasked epitaxial silicon in the thin region is removed therebyexposing a buried oxide layer of the wafer. In some such specific cases,forming on the thick region and forming on the thin region may furtherinclude selectively depositing resist over the thick region includingthe portion of unmasked epitaxial silicon remaining after the initialetch (thereby providing a pattern for a slab for photonics in the thickregion), performing a remainder of the initial etch to remove unmaskedportions of the remaining epitaxial silicon of the thick region, therebydefining a slab for photonics, and then stripping the resist depositedover the thick and thin regions. In one such specific case, forming onthe thick region and forming on the thin region further includeperforming liner oxidation so that remaining epitaxial silicon isprovided with an oxide layer. In another such specific case, forming onthe thick region further includes carrying out a slab implant process.In another such specific case, forming on the thick region and formingon the thin region further include performing an oxide fill process tofill one or more shallow trench isolation regions, patterning an oxidethinning mask (thereby protecting the thick region and exposing the thinregion), and then performing an oxide etch to remove a bulk of oxideabove the thin region and any unprotected isolation region. Here,forming on the thick region and forming on the thin region may furtherinclude performing a chemical mechanical polish (CMP) process so as topolish all oxide down to the underlying top layer of nitride, and thenremoving remaining nitride. In one such case, forming on the thickregion and forming on the thin region further include performing CMOSprocessing, such as sacrificial oxide growth, body implants, gate oxidegrowth, polysilicon gate deposition and patterning, dielectric spacerdeposition and etch back, and/or source/drain implants.

The features and advantages described herein are not all-inclusive and,in particular, many additional features and advantages will be apparentto one of ordinary skill in the art in view of the drawings,specification, and claims. Moreover, it should be noted that thelanguage used in the specification has been principally selected forreadability and instructional purposes, and not to limit the scope ofthe inventive subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-14 show a series of cross-sectional side-views that illustrate amethod for fabricating a semiconductor having structures and devices ofvarying thickness, as well as the resulting semiconductor itself, inaccordance with an embodiment of the present invention. Note that thefigures are not drawn to scale; rather, they are drawn to facilitateexplanation. Details such as layer thicknesses and actual section orfeature locations will be apparent from the corresponding detaileddescription.

DETAILED DESCRIPTION OF THE INVENTION

Techniques are disclosed that facilitate the fabrication ofsemiconductors including structures and devices of varying thickness.For instance, the techniques can be used to fabricate silicon circuitrythat includes fully depleted silicon-on-insulator (SOI) devices (e.g.,around 500 A Si thickness), photonic waveguides (e.g., around 2300 A Sithickness), and/or ring modulators (e.g., which may have slab thicknessvalues around 500 to 800 A). Likewise, the techniques can be used tofabricate silicon-based circuitry that includes both channel and ridgewaveguide structures. Semiconductor circuitry fabricated with materialsother than silicon (e.g., gallium arsenide, indium phosphate, andquartz, sapphire) can equally benefit from the techniques, and numerouscircuit configurations will be apparent in light of this disclosure. Thetechniques are not intended to be limited to particular semiconductormaterials or specific types of circuitry/structures; rather, anysemiconductor materials that can be configured with circuitry/structuresof varying thickness may benefit.

General Overview

As previously explained, semiconductors including both CMOS circuitryand silicon waveguides are currently fabricated so that the CMOScircuitry and waveguides essentially have the same silicon thickness.Such conventional techniques are associated with a number ofdisadvantages, including that they do not allow for fully depleted SOIdevices. Nor do they allow for the ability to modify waveguide thicknessindependently of the CMOS devices.

One embodiment of the present invention provides a method forfabricating SOI CMOS devices and silicon high index contrast (HIC)silicon waveguides and photonic devices on the same substrate, where atleast one of the CMOS devices has a silicon thickness that issignificantly thinner than the silicon thickness for the siliconwaveguides. In some specific such embodiments, the method may be usedfor integration of fully depleted CMOS devices with silicon HICwaveguides having channel and ridge type configurations.

The method may employ a substrate having epitaxial silicon on buriedoxide, although other suitable substrate materials and configurationscan be used, as will be apparent in light of this disclosure. The methodof this example embodiment generally includes thinning the silicon inthe fully depleted CMOS region before beginning the patterning andformation of the silicon waveguides, and before creating isolationregions in the fully depleted CMOS regions. The silicon in the fullydepleted CMOS region can be thinned, for instance, by completing padoxidation, pad nitride deposition, photolithography to block (protect)the photonic regions, and patterning a nitride/oxide stack (alsoreferred to as pad oxide and pad nitride layers, or collectively as atwo-layer hardmask) to expose the silicon regions to be thinned.

Once the nitride/oxide stack is patterned as desired, one option is toimplant oxygen into the silicon using the resist/nitride/oxide stack asa mask, and then strip the resist (note that resist can be strippedbefore or after implant process), wafer clean, and anneal to form oxidein the implanted regions. A second option is to dry etch the silicon toa desired depth, strip the resist (note that resist can be strippedbefore or after dry etch process), and complete a short oxidation toremove dry etch damage. A third option is to strip the resist, waferclean, and then complete a thermal oxide growth to consume underlyingsilicon.

With any of these options, the next step of this example embodiment isto strip the nitride and oxide layers (or what remains thereof), whichcan be done, for example, using hot phosphoric acid and hydrofluoricacid, respectively. At this point, the waveguides can be formed whilesimultaneously patterning the thinned silicon region. One exampleprocess that can be used in forming waveguide structures includingchannel and ridge configurations is described in the previouslyincorporated U.S. application Ser. No. 12/201,807. Any waveguide slabregions may be implanted as needed. The trenches or spaces betweensilicon regions can then be filled, for example, with an oxide. In suchcases, the resulting oxide layer is then planarized.

Note that the planarization is different than typically associated withstandard CMOS processing, because of the extra oxide layer over thethinned silicon regions. At this point, a mask and dry etch can be usedto thin the oxide over the thinned silicon regions, which reduces thepolish load in the thinned silicon regions. The oxide can be planarized,for instance, using chemical mechanical polish (CMP) with the padnitride as a polish stop. The nitride can be removed using hotphosphoric acid, and then the device is ready for integration intostandard CMOS processing (e.g., sacrificial oxidation, body implants,and poly gate formation).

The silicon regions that are not thinned may be used, for example, forpartially depleted CMOS devices (e.g., transistors) and/or photonicdevices (e.g., modulators, ridge, and/or channel waveguides), therebyallowing for photonics devices to be integrated with fully depleted andpartially depleted SOI on the same wafer. In addition, the method can beused to remove or bury residuals in transition regions between fullydepleted CMOS and photonics regions. Thus, disclosed techniques provideboth a semiconductor device that includes a wafer defining both a thinregion and a thick region (thereby enabling a combination of diversethickness circuitries/structures), as well as methodologies for makingsame.

Fabrication Methodology

FIGS. 1-14 show a series of cross-sectional side-views that illustrate amethod for fabricating a semiconductor having structures and devices ofvarying thickness, in accordance with an embodiment of the presentinvention. In addition, the resulting semiconductor device according toone example embodiment is provided. Each of the figures will now bereferred to in turn.

FIG. 1 shows a SOI wafer having epitaxial silicon on a thick buriedoxide (or other suitable insulator material layer). A two-layer hardmaskof oxide (pad oxide) and nitride (pad nitride) is deposited onto the SOIwafer. As can be further seen, the device being constructed has a numberof sections, including a thin CMOS active area, an isolation area, aring modulator or thick CMOS active area, and a waveguide or thick CMOSarea. Resist is deposited over the device's region designated forphotonics or thick CMOS, while the region designated for fully depletedCMOS is left unprotected to allow for thinning of the epitaxial silicon.

In other embodiments, a grown film of amorphous-silicon, polysilicon ornanosilicon can be used in place of the SOI wafer. In general, growingon the flattest possible surface, with the highest quality underlyingoxide, is beneficial. In some embodiments, a high density plasma,chemical vapor deposited (HDP-CVD) silicon dioxide is employed for thispurpose. The HDP-CVD approach provides a high degree of control over theuniformity of the oxide cladding. The underlying substrate below theinsulator and silicon layers can be, for example, silicon, althoughother suitable substrate materials can be used, such as galliumarsenide, indium phosphate, and quartz, sapphire, depending on thematerials being deposited and giving consideration to factors such asthermal coefficients of expansion.

In this example embodiment, the buried oxide is about 3 micrometersthick and can be, for example, silicon dioxide. The layer of epitaxialsilicon is about 2500 angstroms thick, prior to any thinning. The padoxide layer of the hardmask is about 90 angstroms and the nitride padlayer is about 1190 angstroms. In some embodiments, the pad oxide layerof the hardmask is the same material as the buried oxide (e.g., silicondioxide). The resist deposited over the region for photonics or thickCMOS is about 3000 angstroms. These layer thicknesses are not intendedto limit the present invention, and are only provided as an exampleembodiment. Numerous other configurations and layer thickness schemeswill be apparent in light of this disclosure.

Deposition of the hardmask onto the epitaxial silicon in this examplecase involves the deposition of an oxide/nitride hardmask, wherein abottom layer of oxide is deposited followed by a top layer of nitride.The two-layer hardmask allows integration within a CMP based process. Inmore detail, and in accordance with one particular embodiment, a topnitride layer acts as the hardmask and polish stop layer for CMP. Thebottom oxide layer acts as a stop for a subsequent removal of the topnitride layer, thereby preserving circuit (e.g., CMOS and waveguidestructures) qualities not only across the wafer, but from wafer towafer.

FIG. 2 shows patterning of the two-layer hardmask, where portions of thehardmask not covered by resist are removed. The hardmask patterning canbe carried out, for example, using standard photolithography techniques,thereby protecting (with resist) the region for photonics/thick CMOS andexposing the region designated fully depleted CMOS (or othercircuitry/structure that requires a thinned region). A dry etch can beused to remove the pad nitride and pad oxide in the exposed region.

Thinning of the epitaxial silicon at the region for fully depleted CMOScan be carried out in a number of ways using thermal oxidation. FIGS. 3a, 3 b, and 3 c illustrate three example such techniques that can beused. The first option of FIG. 3 a comprises implanting oxygen into theepitaxial silicon layer. In such a case, the resist (shown in FIG. 1),as well as the pad nitride and pad oxide of the two layer hardmask canbe used as an implant mask, to protect the region for photonics and/orthick CMOS from the implantation process. The resist is then stripped,and a wafer clean is performed (e.g., Huang clean). Then, an annealingprocess is carried out to convert the implanted oxygen regions intooxide. Generally, the annealing is carried out at a temperature andduration sufficient to convert the implanted oxygen regions into silicondioxide. The annealing can be carried out, for example, at a temperaturein the range of about 600° C. to about 1,500° C. for a duration in therange of about 1 minute to about 8 hours. Variations on the implant maskwill be apparent in light of this disclosure. For instance, in someembodiments, the resist used to pattern the hardmask can be removed, andonly the two-layer hardmask is used as the implant mask (i.e., stripresist, implant oxygen, clean, and anneal). Furthermore, note thatresist used for the implant mask can be the same as the resist used topattern the hardmask. Alternatively, a separate resist can be used foreach of the hardmask patterning and implant mask steps, if so desired.

The second option of FIG. 3 b comprises partially dry etching theepitaxial silicon, stripping the resist, and then performing a waferclean (e.g., Huang clean). A suitable variation here comprises strippingthe resist, partially dry etching the epitaxial silicon (using the twolayer oxide-nitride stack as a hardmask), and then performing a waferclean (e.g., Huang clean). Then, a thermal oxidation process is carriedout to consume the damaged epitaxial silicon (resulting from the dryetch process). This option requires a very uniform silicon etch rateacross the wafer as well as from wafer to wafer. The third option ofFIG. 3 c comprises stripping the resist and performing a wafer clean(e.g., Huang clean). Then, a thermal oxidation growth process is carriedout to consume the underlying epitaxial silicon. This option avoids theneed for a uniform silicon etch rate across the wafer as well as fromwafer to wafer.

Once the epitaxial silicon is thinned in the region for the fullydepleted CMOS, the method continues as shown in FIG. 4. Here, the padnitride is stripped off (e.g., using a hot phosphoric dip). Similarly,all oxide can be removed (e.g., using a hydrofluoric acid). As can beseen, the resulting structure includes a thinned region of silicon forfully depleted CMOS, and a thicker region of silicon for photonicsand/or partially depleted CMOS.

The method continues as shown in FIG. 5, wherein a new two-layerhardmask is deposited as explained before using pad oxidation (for loweroxide layer) and pad nitride deposition (for upper nitride layer). Thethicknesses for each of the oxide and nitride layers as well as thespecific materials themselves can be, for example, the same as theprevious hardmask. The initial pattern for the waveguides and any activeareas for thick CMOS region is then applied to the two-layer hardmask,where photoresist (resist) is applied to areas that are to be preserved.As is known, an “active area” is a semiconductor term which defines theareas where electronic components (e.g., MOSFETs or other suchgate-level components and modulators, salicide structures, etc) will belocated. This standard electronics layer is combined into the photonicslayer, and both layers are processed as one in an efficient manner thatavoids etching non-uniformities associated with conventional techniques.Note that in other embodiments, two masks could be used to define theelectronics (e.g., CMOS) and photonics (e.g., channel and ridgewaveguides) separately. Further note that a resist mask could be usedover the step region if so desired, but this may likely cause subsequentparticle issues. Other such variations will be apparent in light of thisdisclosure.

The method continues as shown in FIG. 6, wherein an initial etch isperformed on the patterned hardmask to remove unmasked pad nitride andpad oxide layers, as well as portions of the epitaxial silicon layer.The amount removed of the epitaxial silicon layer depends on the regionbeing etched. In more detail, this initial etch is a partial etch of thesilicon region for photonics and thick CMOS, and leaves a prescribedamount of silicon on top of the buried oxide, so that the remainingepitaxial silicon can be used for the slab region of forthcomingmodulators. As can be seen, the hardmask remains on top of the waveguidestructures (which in this example embodiment happen to include a channelwaveguide, and a ridge waveguide included in the ring modulator), andacts as an etch mask again during subsequent etching steps (e.g.,waveguide slab mask etch). In contrast, this initial etch is a full etchof the thinner silicon region for fully depleted CMOS, where the etch ofthat region reaches the buried oxide layer. At point A shown in FIG. 6,note that there may be silicon undercut due to relatively long overetch. In addition, at point B, note that there may be an nitride/oxiderail at the transition point (step region), depending on etchselectivity. Once this initial etch of both the thin region (full etch)and thick region (partial etch) is completed, the resist is thenstripped.

The method continues as shown in FIG. 7, where the region for photonics(or thick CMOS) is patterned to have slabs (for the ring modulator), andbody contacts (for partially depleted CMOS). The resist is deposited asshown. Note that point C can also be protected with resist, or point Ccan be left exposed for more nitride/oxide/silicon etching if necessary.The method continues as shown in FIG. 8, where the second part of theinitial etch (discussed with reference to FIG. 6) is performed tocompletely pattern the epitaxial silicon in the region for photonic andthick CMOS. The resist is then stripped. Note the resulting slabportions of the ring modulator. Again, at point B there may be annitride/oxide rail at the transition point (step region), depending onetch selectivity. Standard photolithography (including suitable resistmaterials) can be used for the slab patterning and etching depicted inFIGS. 7 and 8.

The method continues as shown in FIG. 9, where a wafer clean (e.g.,Huang clean) is performed. Alternatively, this clean step may bereplaced with a resist mask and hydrofluoric acid dip to undercut thepad oxide in CMOS regions. Undercutting the pad oxide leads to increasedrounding (larger radius curve) at the top corners of active areas, whichcan be seen after subsequent oxidations. Typically for CMOS, theincreased rounding is desired. A resist mask may be used to block thehydrofluoric acid exposure to photonic devices, if desired. Then, lineroxidation is carried out so that the remaining epitaxial silicon isprovided with an oxide layer as shown. Liner oxidation minimizes dryetch damage on the top and sides of CMOS active areas and the sides ofthe waveguides. The liner oxide can be, for example, the same as the padoxide and/or buried oxide. In addition, any desired slab implants (e.g.for ring modulator) can be completed using a photolithography (e.g.,resist and etch), implant, and resist strip sequence. Again, at point B,there may be a nitride/oxide rail at the transition point (step regionproximate the isolation region), depending on etch selectivity.

The method continues as shown in FIG. 10, where an oxide fill process isperformed (i.e., the shallow trench isolation regions are filled). Theoxide used for the fill can be, for example, the same as the pad oxideand/or buried oxide. In one particular embodiment, an HDP-CVD oxide isused for the oxide fill process. The patterning of the oxide thinningmask can be carried out, for example, as previously discussed withreference to FIG. 1, using standard photolithography techniques, therebyprotecting (with resist) the region for photonics/thick CMOS andexposing the region designated fully depleted CMOS (or othercircuitry/structure that requires a thinned region). Note that thedimensions of the oxide thinning mask (i.e., resist) can be varied tomodify the transition region as desired. At point D, note that thetransition region can be left exposed or protected with resist,depending on desired attributes of transition region.

As can be seen with reference to FIG. 11, the method continues with anoxide etch (e.g., dry etch) to remove the bulk of oxide above the fullydepleted CMOS active region and any unprotected isolation region. Thisetch process can be used to reduce polish load on the CMOS side. Themethod continues with stripping the resist. In other embodiments, notethat the oxide etch could be eliminated by substituting a selective CMPprocess. In such case, a CMP dish-out process may be used to thin theoxide in the fully depleted CMOS regions. Whether etching or polishingis used depends on factors such as desired polish load or etch load, CMPand/or dish-out capability, desired processing time, etc.

As can be seen with reference to FIG. 12, the method continues with achemical mechanical polish (CMP) process, so as to polish all oxide downto the underlying pad nitride. Note the dish-out technique discussed inthe previous section actually polishes down to the pad nitride, so themethodology can be implemented with either dry etch+CMP or simply CMPwith intentional dishing. The pad nitride is resistant to the CMPaction, and can therefore be used as a polish stop. The method continuesas shown in FIG. 13, with removing the remaining pad nitride using, forexample, a hot phosphoric dip or other suitable nitride removal scheme.As can be seen with reference to FIG. 14, the method may continue withintegration into standard CMOS processing, which may include, forexample, sacrificial oxide growth, body implants, gate oxide(dielectric) growth, polysilicon gate deposition and patterning,dielectric spacer deposition and etch back, and source/drain implants.Thus, and in accordance with one example embodiment, and starting at thepad nitride strip, standard CMOS processing may be used to form fullyand partially depleted CMOS FETs.

Multi-thickness Semiconductor

FIG. 14 shows one example of a multi-thickness semiconductor configuredin accordance with an embodiment of the present invention. As can beseen, the semiconductor includes a fully depleted FET (left side offigure in the region for fully depleted CMOS), where the thinned siliconstructure is used as the active area of a fully depleted FET. Both N andP-channel FETs may be made. The transistors are made by completing therequired body implants into the thinned silicon region, forming a gatedielectric, depositing and patterning a gate conductor material, andcompleting the required source/drain implants. Additionally, spacers maybe used to offset any implants as desired. Similar processing may beused to form partially depleted devices, if so desired. For instance,the channel and ridge waveguide configurations at the right of thesemiconductor device of FIG. 14 can be replaced with partially depletedCMOS FETs, thereby providing a multi-thickness semiconductor having bothfully and partially depleted devices.

The difference between fully and partially depleted devices is that forfully depleted devices, the silicon active regions are so thin that thesource/drain doped regions encompass the full silicon thickness, whereasfor partially depleted devices the silicon active regions aresufficiently thick that the source/drain doped regions do not extend tothe bottom of the silicon active region. Thus, fully depleted devicesonly have lateral source/drain p-n junctions, whereas partially depleteddevices also have vertical p-n junctions at the bottom of thesource/drain regions. Partially depleted FETs may be produced bystarting with silicon blocks built in the same way as the channelwaveguides as discussed herein, as well as the previously incorporatedU.S. application Ser. No. 12/201,807.

Thus, the techniques described herein can be used to integrate, forexample, channel waveguides, ridge waveguides, partially depleted CMOSFETS, and fully depleted CMOS FETs. As will be appreciated in light ofthis disclosure, the process may also encompass integration with otherphotonic and electronic devices, such as ring modulators and photodetectors. Likewise, semiconductor materials other than silicon can beused, such as germanium, gallium arsenide, etc.

The foregoing description of the embodiments of the invention has beenpresented for the purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed. Many modifications and variations are possible in light ofthis disclosure. It is intended that the scope of the invention belimited not by this detailed description, but rather by the claimsappended hereto.

1. A semiconductor device, comprising: a semiconductor wafer substratedefining a thin region and a thick region; one or more photonic devicesformed in the thick region; and one or more fully depleted electronicdevices formed in the thin region.
 2. The device of claim 1 furthercomprising: an isolation area formed between the thin region and thethick region.
 3. The device of claim 1 wherein the substrate has asilicon-on-insulator (SOI) configuration having epitaxial silicon on athick buried oxide, and each of the one or more fully depletedelectronic devices has an epitaxial silicon thickness that is thinnerthan the epitaxial silicon thickness for each of the one or morephotonic devices.
 4. The semiconductor device of claim 1 wherein thethick region further includes one or more partially depleted electronicdevices.
 5. The semiconductor device of claim 4 wherein the one or morefully depleted electronic devices only have lateral p-n junctions, andthe one or more partially depleted devices have both lateral andvertical p-n junctions.
 6. The semiconductor device of claim 4 whereinthe one or more partially depleted electronic devices includes at leastone CMOS transistor.
 7. The semiconductor device of claim 1 wherein theone or more photonic devices includes at least one ring modulator. 8.The semiconductor device of claim 1 wherein the one or more photonicdevices includes at least one waveguide structure.
 9. The semiconductordevice of claim 8 wherein the at least one waveguide structure includesa ridge waveguide and/or a channel waveguide.
 10. The semiconductordevice of claim 1 wherein the one or more photonic devices includes atleast one photo detector.
 11. The semiconductor device of claim 1wherein the one or more photonic devices includes at least one highindex contrast waveguide.
 12. The semiconductor device of claim 11wherein the at least one high index contrast waveguide includes highindex contrast silicon waveguides having channel and/or ridge typeconfigurations.
 13. The semiconductor device of claim 1 wherein the oneor more fully depleted electronic devices includes at least one CMOStransistor.
 14. A semiconductor device, comprising: a semiconductorwafer substrate defining a thin region and a thick region, wherein thesubstrate includes a silicon-on-insulator (SOI) configuration havingepitaxial silicon on a thick buried oxide; one or more photonic devicesformed in the thick region; one or more fully depleted CMOS devicesformed in the thin region; and an isolation area formed between the thinregion and the thick region; wherein each of the one or more fullydepleted CMOS devices has an epitaxial silicon thickness that is thinnerthan the epitaxial silicon thickness for each of the one or morephotonic devices.
 15. The semiconductor device of claim 14 wherein thethick region further includes one or more partially depleted CMOSdevices.
 16. The semiconductor device of claim 15 wherein the one ormore fully depleted CMOS devices only have lateral p-n junctions, andthe one or more partially depleted CMOS devices have both lateral andvertical p-n junctions.
 17. The semiconductor device of claim 14 whereinthe one or more photonic devices includes at least one ring modulatorand/or a photo detector.
 18. The semiconductor device of claim 14wherein the one or more photonic devices includes a ridge waveguideand/or a channel waveguide.
 19. The semiconductor device of claim 14wherein the one or more photonic devices includes at least one highindex contrast waveguide.
 20. The semiconductor device of claim 19wherein the at least one high index contrast waveguide includes highindex contrast silicon waveguides having channel and/or ridge typeconfigurations.
 21. A semiconductor device, comprising: a semiconductorwafer substrate defining a thin region and a thick region; one or morephotonic devices formed in the thick region, wherein the one or morephotonic devices includes at least one of a ridge waveguide, a channelwaveguide, a high index contrast waveguide, and a ring modulator; one ormore fully depleted CMOS devices formed in the thin region; and anisolation area formed between the thin region and the thick region.